Abstract
We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of ∼300 μV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires.
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