Abstract
A new method for the analysis of heterostructures is described and applied to the characterization of InP-InGaAs and AlInAs-InGaAs interfaces. The technique’s principle relies on the selective quenching of the cathodoluminescence of each layer induced by application of an electric field. The cathodoluminescence quenching curves as a function of reverse bias voltage give the position of the interfaces in good agreement with the capacitance versus voltage profile, and hysteresis in the luminescence behavior is ascribed to deep levels at or near the interfaces.
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