Electric and intense laser field effect on the electronic properties of Ga1−x Al x As/GaAs and Ga1−x ln x As/GaAs semi-parabolic quantum wells

Abstract

In the present study, the electronic properties of Ga1−x Al x As/GaAs and Ga1−x ln x As/GaAs semi-parabolic quantum wells (SPQWs) are theoretically investigated as dependent on the intense laser field (ILF) and the electric field within the effective mass. All results show that the shape of the confined potential profile, the energy differences and the dipole moment matrix elements are varied as dependent on ILF and the applied electric field. The energy levels of different SPQWs give different results by varying ILF amplitudes and electric field. In the case of SPQW under ILF and the electric field, there are important modifications of the electrical states of SPQWs, due to the effects of confining the potential resulting from the applied electric field and ILF. The numerical results show that these applied fields have a significant effect on the electronic characteristics of SPQW structures. It is seen that the finding probabilities of the electrons in Ga1−x Al x As/GaAs SPQW are more than Ga1−x In x As/GaAs SPQW. Highlights The shape of SPQWs changes as dependent on ILF. The potential profile of SPQWs depends on the size and direction of the applied electric field. The energy level and the dipole matrix element vary with the changes in SPQW. The probability density for F = ‒30 kV cm−1 are greater both F = 0 and F = 30 kV cm−1 for both SPQWs. The finding probabilities of electrons in SPQWs under ILF are more than for zero ILF.