Abstract
Various mechanisms for the momentum relaxation of phonons and interface polaritons (IP), in semiconductor quantum-well structures, are considered. These are scattering from alloy fluctuations, scattering from charged impurity centers (for LO phonons and IP modes), and scattering from interface roughness (IFR). While all three mechanisms can contribute significantly to the elastic scattering of LO phonons, scattering from IFR is the only important source for momentum relaxation of the IP mode. The size of the IFR is estimated for a few samples reported in the literature by assuming that IFR is responsible for the difference between the experimentally measured and the theoretically calculated electron mobilities. As a result, a minimum interface roughness of between two and five monolayers is obtained
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
