Abstract
AbstractThe elastic properties of dielectric films used in microelectronics, such as undoped, phosphorous doped and boron-phosphorous doped silicate glass, as well as spin-on glass, have been studied by means of the Brillouin light scattering technique. The phase velocity of both the surface Rayleigh wave and of the longitudinal wave in the film material have been measured and the two independent elastic constants c11 and c44 evaluated. This permitted us to derive the values of the Young’s modulus and of the Poisson’s ratio which are useful quantities for the modelling of the elastic properties of multilevel structures used in electronics. Moreover, the biaxial stress in the films has been measured by the substrate curvature method. This enabled us to study the evolution of the intrinsic stress with time, caused by water adsorption into the films. The evolution of the stress during thermal cycles has been also analyzed and the thermal expansion coefficient of the films estimated.
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