Abstract
Finite element (FE) analysis, scanning tunneling microscopy (STM), atomic force microscopy (AFM) and transmission electron microcopy (TEM) observations have been used to model stress relaxation in In0.25Ga0.75As layers grown under tension on InP(0 0 1). Ridges or holes are observed at the free surface, depending on growth conditions. TEM observations show that the In0.25Ga0.75As layers are coherently strained and the corresponding strain contrast is simulated using the dynamical electron diffraction contrast theory. The ridge (or hole) strain fields used for the TEM contrast simulations are deduced from FE calculations. These calculations show that elastic stress relaxation mainly occurs at the crest of the ridges or at the edges of the holes and that the underlying substrate is also stressed. To our knowledge, this is the first study describing such various sites of elastic stress relaxation in layers grown under tension.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
