Abstract
Recently Levinson proposed a dipolar model for the EL2 center in GaAs; this defect could appear in two different configurations (O) and (O ∗) following the electrical history of the center. We identified three TSC low temperature peaks as characteristic of the (O) configuration. The conversion and regeneration of the (O) configuration are observed through these (TSC) peak strengths. It is proposed that the “thermal” regeneration process could be triggered by thermal emission of holes from acceptor levels; we also confirm that EL2 centers are not unique but more likely belong to a family of similar defects.
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