Abstract
Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).
Highlights
Power conversion efficiency (PCE) of perovskite solar cells (PSCs) has been boosted rapidly from 3.8% to certified 25.5% in the past decade [1, 2], gradually approaching that of crystalline silicon (c-Si) solar cells
In order to exceed the S–Q limit, a promising approach is to fabricate tandem solar cells by combining a widebandgap perovskite as the top subcell absorber possessing a tunable bandgap with a low-Eg c-Si [4, 5], copper indium gallium diselenide (CIGS) [6], or mixed tin–lead (Sn–Pb) perovskite [7,8,9], as the bottom subcell absorber
Excessive tris (bromomethyl) benzene (TBB) may reduce the quality of perovskite films in terms of peak intensity and full width at half maximum (FWHM) value at the doping ratio of 0.5 and 0.7%
Summary
Power conversion efficiency (PCE) of perovskite solar cells (PSCs) has been boosted rapidly from 3.8% to certified 25.5% in the past decade [1, 2], gradually approaching that of crystalline silicon (c-Si) solar cells. Yan and coworkers have explored the synergistic effects of solvent annealing and lead thiocyanate (Pb(SCN)2) on wide-Eg perovskite formation and quality, reporting a high PCE exceeding 17% with a Voc of 1.25 V [26]. Chen et al have developed a posttreatment approach with guanidinium bromide (GABr) on the perovskite surface, realizing a high Voc of 1.24 V in inverted p-i-n PSCs [28]. Very recently, they have further applied phenethylammonium iodide (PEAI) to retard the accumulation of ionic defects in 1.73 eV perovskite, leading to a Voc of 1.25 V [29]. We achieve an improved PCE of 17.12% with a Voc approaching 1.2 V for 1.73 eV-perovskite-based inverted devices
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