Abstract
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θSH > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant θSH up to 4.1 and a high thermal budget up to 600 °C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high θSH and high compatibility with the BEOL process that would be easily adopted by the industry.
Highlights
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect
Since half-Heusler alloy topological semi-metal (HHA-TSM) includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high θSH and high compatibility with the BEOL process that would be adopted by the industry
We have demonstrated a proof of concept that by using a HHA-TSM, we can combine the advantage of the high spin Hall performance of TIs and the high thermal stability (> 400 °C) of heavy metals (HMs), which make it much easier for industrial adoption than the case of TIs
Summary
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. Some of them have been already adopted as buffering or lining materials in silicon Back‐End‐of‐Line (BEOL) process These HMs, considered as the first-generation spin Hall materials, have been heavily studied by the industry as candidates for spin current sources in spintronic devices. There is no report on the spin Hall performance of these compounds
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