Abstract
Solvothermal reduction of graphene oxide performed up to a sp2/sp3 ratio of 20 was demonstrated. The presence of chemical and structural defects was minimized by varying the treatment conditions and reduction agents to reduce their impact on electronic and optical properties. Using the interphase deposition technique both graphene oxide and reduced graphene oxide films were transferred onto ITO-coated glass substrates or SITAL for further analysis. The analysis of the electric characteristics of the reduced graphene oxide films showed high sheet resistance originated from grain boundary resistance. The optical transmittance of the films reached 30% for the most uniform coatings.
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