Abstract
GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and > 4 mW with corresponding DC-to-RF conversion efficiencies of > 1.0 and > 0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below –94 dBc/Hz at a carrier frequency of 500 kHz. Simulations revealed a varactor-like mode of operation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
