Abstract
Silicon nanowires have been fabricated with a triangular cross-section of side length ∼65 nm, and their photoluminescence (PL) properties have been studied. The phonon-assisted PL bands are observed in the near-infrared spectral region. At low temperatures, the PL spectra of the silicon nanowires are quite similar to those of bulk silicon crystals. In the silicon nanowires, the intensity of the phonon-assisted PL bands is not sensitive to temperature and the PL bands are clearly observed even at room temperature. The mechanism of the room-temperature luminescence in silicon nanowires is discussed.
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