Abstract
An accurate calculation of the large-signal a.c. behavior with detailed thermal considerations is presented for GaAs and InP transferred electron devices. This is accomplished by sequentially solving the temperature dependent drift and diffusion equations along with a novel heat flow analysis to update the temperature profile in the device. The drift and diffusion equations employ both field and temperature dependent mobility and diffusivity derived from Monte Carlo simulations, and the thermal analysis includes all regions of the device. Simulation results are compared to experimental devices with good agreement. The relationship between the graded active layer doping profiles, device area and device length, with the device temperature, output power and device admittance is clearly illuminated by the temperature dependent large-signal a.c. simulator. For the devices simulated, the complex device admittances are calculated over the range of stable operation and at the maximum power point.
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