Abstract
The efficiency of electroluminescence in ZnS is examined on the basis of a model of impact ionization in a barrier. On the basis of such a model, the efficiency depends on the ionization rate, and this rate has here been calculated by applying a theory developed for Ge and Si to ZnS. By considering the voltage dependence of the efficiency one can then get an estimate of a maximum obtainable efficiency in terms of the ratio of the barrier voltage to the total voltage. Both on the basis of this maximum efficiency and from other considerations it appears that the present theory can account for the magnitude of efficiencies reported to date.
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