Abstract
A back surface field CIGS multilayer solar cell structure is simulated by SCAPS 1D, in which a CZTSSe layer is added between BSF and CIGS layers as a second absorber layer. To achieve the best performance for the proposed structure, the thickness of different layers and the related carrier concentration varied. The 1 µm and 0.05 µm thickness for CZTSSe and CIGS leads to the best performance of the device. The optimum thickness for the rest of layers is also calculated. The effect of the carrier concentration on the performance of the proposed solar cell is also studied. After optimization, a solar cell with a privileged power conversion efficiency of 35.1% was achieved.
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