Abstract
A GaN/Al0.15Ga0.85N/GaN heterojunctionis designed to enhance the electron confinement and improve the hole injection efficiency of GaN-based MQW LEDs. The physical and optical properties of GaN-based MQW LEDs with and without the heterojunction structure are investigated. The simulation results show that the LEDs with the heterojunction structure quantum barrier exhibit much higher output power and lower threshold voltage as compared to those with the traditional structure due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong reverse electrostatic fields in the heterojunction structure
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: DEStech Transactions on Engineering and Technology Research
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
