Abstract
This paper presents a high-efficiency broadband GaN HEMT class-F Doherty Power amplifier at 3.5GHz for LTE-Advanced applications. The carrier and peak amplifier of the Doherty amplifier both adopts class-F design strategy to obtain higher efficiency, in which the transmission-line harmonic suppression network for controlling the second and third harmonics is employed. Measurement results show that DE of the proposed PA can achieve higher than 50% at the output power range of 40-46dBm. The efficiency is improved 10% comparing to conventional class-AB Doherty amplifier at most. The linearity performance of class-F Doherty PA is demonstrated with LTE-Advanced signals by utilizing the PA linearization technique combined of DPD and PAPR reduction techniques, the ACLR can reach -47dBc and -46dBc for 40MHz and 60MHz bandwidth respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
