Effects of Zr doping content on microstructure, ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin film

Abstract

Ion-doping is a key factor affecting the microstructure and electrical properties of Na 0.5 Bi 0.5 TiO 3 (NBT) thin film. In this paper, Na 0.5 Bi 0.5 (Ti 1− x Zr x )O 3 ( x =0, 0.01, 0.02, 0.04) thin films were prepared using chemical solution decomposition and the effects of Zr 4+ doping content on crystalline, ferroelectric and dielectric properties were characterized. Compared with the other films, NBT with 2 mol% Zr 4+ doping content exhibits enhanced ferroelectricity with a remanent polarization ( P r ) of 12.3 μC/cm 2 due to the high densification, as well as reduced leakage current and distortion of Ti–O octahedral. The dielectric constant ( ε r ) and dissipation factor (tan δ ) on frequency show small dispersion tendency with ε r of 263 and tan δ of 0.067 at 100 kHz. Also, the capacitance–voltage curve displays a relatively sharp feature with a high dielectric tunability of 61.6%. • NBTZr 0.02 shows a well-defined P–E with a remanent polarization of 12.3 μC/cm 2 . • The high densification and Ti–O distortion favor the enhanced ferroelectricity. • The dependence of ε r on frequency for NBTZr 0.02 film has small dispersion tendency. • At 100 kHz, for NBTZr 0.02 , ε r =263, tan δ =0.067, dielectric tunability=61.6%.