Abstract
Addition of water vapor to oxygen enhances the room temperature oxidation of the (110) cleaved surfaces of compound semiconductors. The chemical shifts caused by wet oxidation are larger than those caused by dry oxidation for InSb, but are approximately equal for GaAs and GaP. The excitation of dry oxygen by a Tesla transformer enhances the oxidation much more and also causes higher oxidized states than those produced by dry oxidation at room temperature. The oxidation behaviors of the semiconductors under various oxidation conditions are discussed.
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