Abstract
We fabricated solution-processed IGZO and ZTO TFTs with annealing temperature of 350 {degree sign}C employing Ultra-Violet (UV) radiation treatment. The electrical characteristics of solution-processed oxide TFTs would be considerably improved by employing UV treatment on the active layer of oxide TFTs. UV treatment increased electron concentration of IGZO and ZTO active layer because electrons were generated with increasing O-H bonding by UV in oxide semiconductors. The threshold voltage decreased and the saturation mobility increased by UV treatment due to the increase of electron concentration at low annealing temperature of 350 {degree sign}C in solution-processed oxide TFTs. Saturation mobility of solution-processed IGZO TFTs increased from 0.31 cm2/V∙sec (without UV treatment) to 2.96 cm2/V∙sec (with 1 h UV treatment) and that of solution-processed ZTO TFTs increased from 0.01 cm2/V∙sec (without UV treatment) to 0.30 cm2/V∙sec (with 1 h UV treatment) with UV treatment.
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