Abstract
In this paper, we fabricated Pt / TiO x/ ZnO / n +- Si structures by inserting TiO x interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiO x interlayer with different thickness on the resistance switching of Pt / TiO x/ ZnO / n +- Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt / TiO x/ ZnO / n +- Si structures were investigated as a function of TiO x thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt / TiO x/ ZnO / n +- Si structures. Additionally, the switching mechanism was analyzed by the filament model.
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