Effects of TiO2 buffer layer on carbon nanotube grown on Ti substrate by thermal chemical vapour deposition and their electrochemical properties

Abstract

Non-conductive substrates, such as silicon wafers, have usually been used to synthesise carbon nanotubes (CNTs). However, in applications such as electrodes, it is desirable to have CNTs grown on conductive buffer layer and conductive substrates. Vertically aligned multiwall CNTs were grown on Ni/TiO2/Ti substrates by thermal chemical vapour deposition. The experimental parameters are synthesis temperature, time and buffer layer thickness. The synthesised multiwall CNTs have an outer diameter of ∼100 nm and length of about 5–10 μm. Li/multiwall CNT cell with multiwall CNTs on Ti substrate exhibited good charge/discharge behaviour and slow capacity fading. The samples were characterised by means of field emission scanning electron microscopy, Raman spectroscopy analysis, transmission electron microscopy and electrochemical test.