Abstract
A multi-step activation method, which include an oxygen plasma treatment, chemical treatment, and post annealing in N2 was proposed to enhance the hole concentration of a p-type GaN epitaxial layer. This process was found to effectively activate p-GaN by increasing the hole concentration compared to that of the conventionally annealed sample. After the optimal oxygen plasma treatment (10min at a source and table power of 500W and 100W, respectively), followed by a HCl and buffered oxide etchant treatment, and then by a post-RTA process in a N2 environment, the hole concentration was increased from 4.0×1017 to 2.0×1018cm−3. The oxygen plasma was found to effectively remove the remaining H atoms and subsequent wet treatment can effectively remove the GaOx that had formed during O plasma treatment, resulting in the higher intensity of photoluminescence.
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