Abstract
Tantalum-substituted Bi 4Ti 3O 12 (Bi 4Ti 3- x/5 Ta x/5 O 12, BTTO) thin films were fabricated on Pt(111)/Ti/SiO 2/Si(100) substrates by sol–gel technology. The effects of various processing parameters, including Ta content ( x=0∼0.08) and annealing temperature (500∼800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi 4Ti 3O 12 could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2 P r) of 50 μC/cm 2 and a low coercive field (2 E c) of 104 kV/cm, fatigue free characteristics up to ≧ 10 8 switching cycles.
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