Abstract
High-quality transparent conductive gallium-doped ZnO (GZO) thin films were deposited on quartz glass substrates using pulsed laser deposition. The structure and electrical and optical properties of the as-grown GZO films were mainly investigated. In X-ray diffraction, (002) and (004) peaks were detected, indicating that Ga doping did not cause structural degradation of wurtzite ZnO. The chemical state of GZO films was investigated by X-ray photoelectron spectroscopy. The GZO films formed at a substrate temperature of 300°C showed a low electrical resistivity of 8.12 × 10 − 5 Ω cm, a carrier concentration of 1.46 × 10 22 cm − 3 and a carrier mobility of 30.96 cm 2/Vs at an oxygen pressure of 0.67 Pa. A visible transmittance of above 90% was obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
