Abstract

ABSTRACTSilicon can alleviate biotic and abiotic stresses in several crops, and it has beneficial effects on plants under nonstressed conditions. However, there is still doubt about foliar‐applied Si efficiency and Si effects on mineral nutrition, physiological processes, and growth of potato (Solanum tuberosum L.) plants under well‐watered conditions. The objective of this study was to evaluate the effect of soil and foliar application of soluble Si on Si accumulation, nutrients, and pigments concentration as well as gas exchange and growth of potato plants. The experiment was conducted under greenhouse conditions in pots containing 35 dm3 of a Typic Acrortox soil. The treatments consisted of a control (no Si application), soil application of soluble Si (50 mg dm−3 Si), and foliar application of soluble Si (three sprays of 1.425 mM Si water solution, prepared with a soluble concentrate stabilized silicic acid), with eight replications. Both soil and foliar application of Si resulted in higher Si accumulation in the whole plant. Foliar application of Si resulted in the greatest Si concentration in leaves, and soil application increased Si concentration in leaves, stems, and roots. Silicon application, regardless of the application method, increased leaf area, specific leaf area, and pigment concentration (chlorophyll a and carotenoids) as well as photosynthesis and transpiration rates of well‐watered potato plants. However, only soil application increased P concentration in leaves and dry weight of leaves and stems.

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