Abstract
ABSTRACT Effects of silicon (Si) application on photosynthesis of solution-cultured cucumber seedlings were investigated under osmotic stress and unstressed conditions. In unstressed conditions, silicon application had no effect on growth and photosynthetic parameters. The responses of the photosynthetic parameters to abruptly imposed osmotic stress did not differ between silicon treatments. After 1 week exposure to osmotic stress, growth reduction was observed, but it was less severe in seedlings grown with silicon than in those without silicon. Although there were no differences between silicon treatments in stomatal conductance, transpiration rate, cuticular transpiration, or xylem sap exudation rate under osmotic stress, leaf intercellular carbon dioxide (CO2) concentration was significantly lower and photosynthetic rate tended to be higher in seedlings supplied with silicon. These results suggested that the silicon-induced alleviation of growth reduction under osmotic stress in cucumber was due to amelioration of stress-induced damage of leaf tissues rather than to improvement of leaf water status.
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