Abstract
In this paper, the effects of rare earth materials on thin film devices has been discussed. In order to demonstrate the various effects caused by the rare earth materials, a simple Fully Depleted Silicon on Insulator (FD-SOI) MOSFET of gate length 28nm has been considered. The performance of the device is studied for different type of the rare earth (La 2 O 3 and LaLuO 3 ) materials, used as gate dielectric at different oxide thickness. Further the performance of the device is modelled for study of drain current. It is found that FD-SOI MOSFETs are showing better electrical behavior with rare earth materials and there is flexibility of oxide thickness reduction as compared to conventional materials available in the literature. The device is showing an improvement in its result of drive current (I on ) and off state leakage current (I off ).
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