Abstract
We present an analytical study of effects that circularly polarized light irradiation has on spin-valley currents in a dual ferromagnetic-gated silicene. Two identical electric fields are applied to both ferromagnetic (FM) gates. Two exchange field configurations, parallel (P) and anti-parallel (AP), are applied along with chemical potential to the FM gates in this investigation. The results show that application of circularly polarized light has an impact on polarized spin and valley current characteristics, particularly at the off-resonant frequency region. It also enhances the amplitude of tunneling magnetoresistance (TMR) significantly. In addition, we found that exchange field configuration has an effect on both spin polarization and valley polarization. Our study suggests the potential of this scheme in applications, such as spin-valleytronic photo-sensing devices under polarized-photo irradiation.
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