Abstract
Effects of Pb doping on the microstructural, optical, and hole transport properties of Sn1−xfPbxfO films fabricated by pulsed laser deposition were investigated. It was found that Pb was not solved in bulk ceramic samples, while solved up to xf = 0.035 in the thin films. The Pb doping enlarged the optical bandgap, decreased the hole concentration, and reduced the Hall mobility (μHall, from 1.95 to 0.68 cm2 V−1 s−1 up to xf = 0.035) as xf increased. The field-effect mobility in thin-film transistors also decreased with xf (μlin, from 0.34 to 0.0024 cm2 V−1 s−1), but the deterioration of μlin was significantly larger than that of μHall. It is speculated that the deterioration of μHall would be due to the increase in grain boundary potential barriers. The deterioration of μlin, low on-state current, and high off-state current are explained semiquantitatively by a simple hole trap model. Similar explanations would be applied also to previous reports on Sb / Y doped-SnO. Location of the highest occupied states of Pb2+ relative to that of Sn2+ (i.e., Pb 6s2 and Sn 5s2, respectively) clarified by DFTcalculations provides an explantion for the observed result.
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