Effects of pad and interconnection parasitics on forward transit time in HBTs

Abstract

A new analytical expression using Y-parameters is derived from the full heterojunction bipolar transistor (HBT) equivalent circuit including probe-pattern parasitics, in order to extract the forward transit time accurately without a conventional de-embedding procedure. The correction procedure of this Y-parameter method does not require the measurement of extra test patterns such as open or short structures, thus being free of the possible de-embedding errors attributed to the inaccuracy of test structures. To compare the de-embedding effect on /spl tau//sub F/ in the Y-parameter method with that in the previous f/sub T/ method, C/sub /spl pi///g/sub mo/ versus 1/I/sub c/ curves are plotted with 1/2/spl pi/f/sub T/ versus 1/I/sub c/ in the cases of de-embedding and no de-embedding. This comparison clearly exhibits that the contribution of the probe-pattern parasitics to /spl tau//sub F/ in the Y-parameter method is much smaller than that in the conventional f/sub T/ method. The smaller contribution to /spl tau//sub F/ may result in the enhancement of the de-embedding accuracy in the Y-parameter method.