Abstract
We report that oxygen plasma treatment significantly changes the surface properties of Ga-doped ZnO (GZO) thin films, leading to an increase of work function and a large reduction in contact angles. We attribute the increase of work function of the GZO thin films after oxygen plasma treatment to both the lowering of the Fermi level and the shift in ionization potential.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.