Effects of nitrogen annealing on electron scatterings in SiSiO 2 interface

Abstract

The effective mobility of electrons at Si (100) surfaces was measured as a function of electron density N s = 5 × 10 11−1 × 10 13 cm −2 at 4.2K for samples with and without annealing (10 min–2 hr) in nitrogen gas at 1000°C after wet thermal oxidation. A great part of the scattering by Coulomb and short-range potentials was reduced by a short (∼10 min) anneal time, although the subsequent annealing resulted in a slight increase in the number of the scatterers. On the other hand, scattering by a surface roughness potential was reduced with increase in the anneal time. These scattering effects associated with N 2 annealing are discussed.