Abstract
The AC thin-film electroluminescent (ACTFEL) devices were prepared by using 1 μm-thick ZnS:Mn luminescent layers formed by molecular beam deposition (MBD). The devices had a structure of glass/In 2O 3/barium-titanate/ZnS:Mn/Al. The EL properties of the device are remarkably dependent on the temperature of a Mn effusion cell ( T Mn) during the ZnS:Mn deposition. Although the crystalline quality of the layers was poor and the surface morphology was rough, a low threshold field ( E th) of 0.82×10 6 V/cm, and a high maximum luminance ( L max) of 4200 cd/m 2 were obtained at 5 kHz sinusoidal operation. The ACEL properties were dependent not only on the crystallographic quality but also on the Mn concentration in the luminescent layer.
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