Abstract

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

Highlights

  • Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers

  • It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality

  • Pits that occur on the surface of the multiple quantum wells (MQW) and that are due to the strain. If these dislocation-related pits are not partially suppressed, they will eventually result in surface pits associated with threading dislocations that intersect the MQW,[17] thereby reducing the crystal quality and conductivity of the contact layer, which will be reflected on the performance of DUV LED

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Summary

Introduction

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers.

Results
Conclusion

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