Abstract
In this paper, H+ is used to bombard N-type undoped GaAs substrates. This process imparts semiconductor-like electrical properties to GaAs substrates, which are inherently semi-insulating, semiconductor-like electrical properties. Atomic force microscopy, Transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to measure the shape and structure of the sample, and the Physical Property Measurement System was used to test the electrical properties of the samples. According to the results, the treated GaAs substrate surface has hole-type conductivity at 84 K and electron-type conductivity at room temperature. This method not only does not cause damage to the lattice structure of the GaAs surface, but also realizes the transformation of the GaAs surface properties, which provides a new idea for the development of GaAs-based heterojunction devices in the future.
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