Abstract
The influence of the light intensity level, of illuminance depth and of temperature on some parameters of a silicon solar cell operating in the vicinity of the short-circuit has been the subject of our study.Starting from the continuity equation, then from the equation of the density of minority charge carriers where the effects were studied, we have analyzed the performance parameters according to a temperature range from and under an illumination from to Sun.The results indicate that the illumination intensity has a dominant effect on the current parameters.The photocurrent density and the short-circuit current increase with increasing light intensity level whereas the shunt resistance is more sensitive to temperature variations.
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