Abstract
ABSTRACTExperiments on the intrinsic gettering of Cr in p-type Czochralski-grown Si including lamp pulse annealings have been carried out. Transmission Electron Microscopy observations of both oxide and metallic precipitates on cross-sectional specimens, as well as quantitative results about the electrically active metal depth-profiles, using Deep Level Transient Spectroscopy measurements, are presented. We have observed that a lamp pulse (1200 °C/5 s) applied prior to a three-step gettering cycle produced a strong retardation of the oxygen precipitation, and consequently an inhibition of the Cr bulk precipitation during the nucleation step. Besides, it was observed that the Cr-precipitates formed in the bulk during the oxygen nucleation step were highly unstable upon a post-gettering 2–4 s lamp pulse at 1000 °C, whereas the same lamp pulse did not produce a significant re-dissolution of Cr-precipitates formed during the oxide precipitate growth step. The reversibility of the intrinsic gettering of Cr upon a post-gettering lamp pulse thus critically depends on the oxide precipitate growth rate during the gettering process.
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