Abstract
Abstract Crystalline quartz substrates have been exposed to bombardments of ions, light ions of helium at 100 keV being more often implanted. Implantation-induced changes in quartz physical properties have been characterized using various methods. All experimental results show that a crystalline-to-amorphous transition is obtained for a large ion dose, the features of the perturbed layer being close to those of vitreous silica. Effects of ion implantation were investigated for different implantation conditions and the influence of annealing was determined. Moreover, implantation-produced perturbations of surface acoustic wave velocity, propagation loss and temperature coefficient of delay are reported. Applications of the implantation technique to elastic wave devices are discussed.
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