Abstract
We study effects of changing inter wall hopping on the electronic and structural properties of ( n , n ) @ ( 2 n , 2 n ) and ( n , 0 ) @ ( 2 n , 0 ) double-wall carbon nanotubes using tight-binding model. We found by switching inter-wall interactions a valley opened in the ( n , n ) @ ( 2 n , 2 n ) local density of states, although both walls remained metallic. For the case of ( n , 0 ) @ ( 2 n , 0 ) where n is not multiple of 3 a semiconducting to metallic phase transition is found, while when n is multiple of 3 both inner and outer walls remained metallic.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
