Abstract
In the framework of the model of radiation-enhanced diffusion in the systems with impurities, effects of the formation of “vacancy–impurity atom” complexes on accumulation and annealing of radiation defects, rate of the growth of vacancy voids, and radiation creep in Fe-based austenite alloys are investigated. The temperature dependences of the steady-state concentration of radiation point defects, the concentration of vacancy complexes, and the effective coefficient of mutual recombination of radiation defects in materials with impurity complexes with a different bonding energy are calculated. The possibility of the suppression of the vacancy swelling and radiation creep effects due to formation of “vacancy–impurity atom” complexes having a high bonding energy is shown.
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