Abstract
The hydrostatic-pressure effects on the electron-effective Landé factor and g-factor anisotropyin semiconductor GaAs–Ga1−xAlxAs quantum wells under magnetic fields are studied. The factor is computed by considering the non-parabolicity and anisotropy of theconduction band through the Ogg–McCombe effective Hamiltonian, and numericalresults are displayed as functions of the applied hydrostatic pressure, magneticfields, and quantum-well widths. Good agreement between theoretical results andexperimental measurements in GaAs–(Ga, Al)As quantum wells for the electrong factorand g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostaticpressure is obtained. Present results open up new possibilities for manipulating the electron-effectiveg factor in semiconductor heterostructures.
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