Abstract
We report on the effects of H-implantation on the magnetic and magnetocaloric properties of amorphous FeZr films. Arrott plots reveal a second order ferromagnetic to paramagnetic phase transition for the as-grown and H-implanted films, with an increase in TC from 160 to 200 K upon implantation. The maximum change in magnetic entropy (-ΔSM) increases from 0.66 to 0.77J/kgK for a field change μ0ΔH = 1.5T, as well as the relative cooling power (RCP) values were improved from 84.5 to 108.6J/kg. This improvement was attributed to the increase in magnetization and chemical inhomogeneity induced by the implantation process. The increase in the chemical inhomogeneity was supported by the determination of the local exponent n extracted from the slope of Ln(−ΔSM) as a function of Ln(μ0H), which is line with the simulated depth profile of hydrogen atoms through the FeZr film.
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