Abstract
The effects of heavy-ion irradiation on 3-D NAND flash memory cells are investigated. Threshold voltage distributions are studied before and after exposure, as a function of the linear energy transfer, fluence, and irradiation angle. Shifts are smaller in 3-D devices than those in planar ones, for the same equivalent bit density. The cell circular shape and the fact that the tunnel oxide and interpoly dielectric blocking layers are perpendicular to the semiconductor substrate make it possible to gain insight into the underlying upset mechanism, which cannot be obtained with planar devices. Evidence that energy deposition in the blocking oxide layer can contribute to charge loss from the floating gate is presented.
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