Abstract
This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.
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