Abstract
Effects of growth temperature and V/III ratio on surface morphology, crystallinity and residual impurities of MOCVD-grown GaAs-on-Si have been studied. The effects are different from those on MOCVD-grown GaAs-on-GaAs. The difference arises from the heteroepitaxial problems. High silicon concentrations are found in all the GaAs-on-Si, and the electrical activation of silicon as a donor reaches 100% for higher growth temperatures. Crystallinity improves but surface morphology degrades with increasing growth temperature. The trade-off between crystallinity and surface morphology has been eliminated by the three-step growth process.
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