Abstract
Effects of gamma irradiations on structural and electrical properties of the post-annealed indium oxide thin films of thickness 750nm, prepared by thermal evaporation in vacuum, were studied. The thin films, exposed to various levels of the gamma radiation dose, were characterized by XRD, SEM and I–V measurements. Results show that the average grain size and the degree of crystallinity increase with the gamma radiation dose up to a certain dose and decrease thereafter. Results also show that the conductivity increases with the gamma radiation dose up to the same value of the dose and decreases thereafter. The dislocation density, however, shows the opposite trend of the dose dependence.
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