Abstract
This paper reports on electrical and physical characteristics of erbium oxide (Er2O3) dielectric films combined with fluorine implantation on polycrystalline silicon. It was found that high-k Er2O3 polyoxides with fluorine implantation have lower trapping rates and higher dielectric breakdown fields than as-deposited samples. Research indicates that the fluorine ion can passivate dangling and weak Si-H bonds, forming strong Si-F bonds after adequate rapid thermal annealing and resulting in superior characteristics and improved electrical stress endurance.
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