Abstract
Cr-substituted BiFeO3 (BFCr) thin films prepared from precursor solutions with stoichiometric composition and various excess Bi contents ranged from 5 to 20 mol% were fabricated on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method, and the effects of excess Bi content in precursor solutions on the ferroelectric properties of the as-deposited BFCr thin films were studied. It was found that the BFCr thin film prepared from precursor solution with excess Bi content of 5 mol% exhibited the best dielectric constant–frequency and polarization–electric field characteristics. In detail, its dielectric constant is 158 at frequency of 100 kHz and remnant polarization (P r ) value is 49 μ C/cm2 at electric field of 600 kV/cm.
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