Abstract
The reliability of RF AlGaN/GaN HEMT devices on SiC substrate is investigated here in pulsed RF condition at nominal and maximum rating drain quiescent bias. During these 3500hour tests, high voltage especially during the RF pulse leads to a progressive decrease in gm and IDSS while trap concentration increases. These evolutions may be attributed to trap generation by hot carrier injection and highlight the importance of drain quiescent voltage as an important acceleration factor for this technology's reliability in pulsed RF conditions.
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